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ONSEMI NTMFS10N7D2C

Power MOSFET, N Channel, 100 V, 78 A, 0.0072 ohm, Power 56, Surface Mount

ONSEMI NTMFS10N7D2C

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
NTMFS10N7D2C
Order Code:
2768338
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Technical Datasheet:
NTMFS10N7D2C   Datasheet
ECAD / MCAD
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Product Overview

NTMFS10N7D2C is a power trench, N‐channel, shielded gate MOSFET. This N-channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Application includes primary DC−DC MOSFET, synchronous rectifier in DC−DC and AC−DC, motor drive and solar.
  • Lowers switching noise/EMI
  • 100% UIL tested
  • Drain to source voltage is 100V (TA = 25°C)
  • 50% lower Qrr than other MOSFET suppliers
  • Gate to source voltage is ±20V (TA = 25°C)
  • Drain current is 78A (continuous, TC = 25°C)
  • Single pulse avalanche energy is 216mJ (TC = 25°C)
  • Power dissipation is 83W (TC = 25°C)
  • Turn-on delay time is 13ns (typ, VDD = 50V, ID = 28A, VGS = 10V, RGEN = 6ohm,TJ = 25°C)
  • PQFN8 package, operating and storage junction temperature range from -55 to +150°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
N Channel

:
100V

:
78A

:
0.0072ohm

:
Power 56

:
Surface Mount

:
10V

:
4V

:
83W

:
8Pins

:
150°C

:
PowerTrench Series

:
-

:
MSL 1 - Unlimited

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Technical Documents (3)

Packaging type Cut Tape

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794 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥562.74 ( ¥619.01  Inc. JCT)

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