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ONSEMI NSS60200LT1G

Bipolar (BJT) Single Transistor, PNP, 60 V, 2 A, 540 mW, SOT-23, Surface Mount

ONSEMI NSS60200LT1G

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
NSS60200LT1G
Order Code:
2317570
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Technical Datasheet:
NSS60200LT1G   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Overview

The NSS60200LT1G is a 4A PNP Bipolar Transistor designed for use in low voltage and high speed switching applications where affordable efficient energy control is important. It is a miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability. In the automotive industry it can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the linear gain (Beta) makes it ideal components in analogue amplifiers.
  • ESD robust
  • High current gain
  • High cut-off frequency
  • Low profile package
  • Improved circuit efficiency
  • Decreased battery charge time
  • Reduce component count
  • High frequency switching
  • Smaller portable product
  • No distortion
  • AECQ101 qualified and PPAP capable

Applications

Industrial, Power Management, Automotive, Signal Processing, Portable Devices, Wireless, Consumer Electronics, Computers & Computer Peripherals, Motor Drive & Control, Communications & Networking

Product Information

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:
PNP

:
60V

:
2A

:
540mW

:
SOT-23

:
Surface Mount

:
3Pins

:
100MHz

:
100hFE

:
150°C

:
-

:
AEC-Q101

:
MSL 1 - Unlimited

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Technical Documents (2)

Available for back order

More stock available to supplier lead times which is approximately 5/5/25

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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¥65.84 ( ¥72.42  Inc. JCT)

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