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ONSEMI NCP51560BBDWR2G

Gate Driver, 2 Channels, High Side, Low Side, Half Bridge, MOSFET, SiC MOSFET, WSOIC-16

ONSEMI NCP51560BBDWR2G

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
NCP51560BBDWR2G
Order Code:
4079780
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Technical Datasheet:
NCP51560BBDWR2G   Datasheet
ECAD / MCAD
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Product Overview

NCP51560 is a isolated dual−channel gate driver with 4.5A/9A source and sink peak current respectively. This is designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. This offers short and matched propagation delays. Two independent and 5KVrms internal galvanic isolation from input to each output and internal functional isolation between the two output driver allows a working voltage of up to 1500VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. Typical applications are motor drives, isolated converters in DC−DC and AC−DC power supply, server, telecom and industrial infrastructures.
  • Common mode transient immunity CMTI 200V/ns
  • Propagation delay (typ) 38ns with 5ns max delay matching per channel, 5ns max pulse width distortion
  • User programmable input logic, DISABLE mode
  • User programmable dead−time
  • 5KVrms isolation for 1 minute (per UL1577 requirements)
  • 8000 VPK reinforced isolation voltage (per VDE0884−11 requirements)
  • CQC certification per GB4943.1−2011
  • SGS FIMO certification per IEC 62386−1
  • SOIC−16 WB package

Product Information

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:
2Channels

:
Isolated

:
High Side, Low Side, Half Bridge

:
MOSFET, SiC MOSFET

:
16Pins

:
WSOIC

:
Surface Mount

:
-

:
4.5A

:
9A

:
3V

:
5V

:
-40°C

:
125°C

:
38ns

:
38ns

:
-

:
-

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Technical Documents (2)

Packaging type Cut Tape

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More stock available to supplier lead times which is approximately 8/4/25

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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¥608.19 ( ¥669.01  Inc. JCT)

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