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ONSEMI NCP5104DR2G

MOSFET Driver, Half Bridge, 10V-20V Supply, 500mA Out, 35ns Delay, SOIC-8

ONSEMI NCP5104DR2G

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
NCP5104DR2G
Order Code:
2464232
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Technical Datasheet:
NCP5104DR2G   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Overview

The NCP5104DR2G is a high voltage Power Gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to insure a proper drive of the high-side power switch.
  • High and low drive outputs
  • Up to VCC swing on input pins
  • Extended allowable negative bridge pin voltage swing to -10V for signal propagation
  • Matched propagation delays between both channels
  • 1 Input with internal fixed dead time (520ns)
  • Under VCC lockout (UVLO) for both channels
  • Pin-to-Pin-compatible with industry standards
  • Rugged and flexible design
  • Robust design
  • Low level input for micro-controller operation
  • Up to 600V High voltage
  • ±50V/ns dV/dt Immunity
  • 250/500mA Output source/sink current capability
  • 3.3 and 5V Input logic compatible

Applications

Lighting, Signal Processing, Logistics, Motor Drive & Control

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
2Channels

:
Isolated

:
Half Bridge

:
MOSFET

:
8Pins

:
SOIC

:
Surface Mount

:
Non-Inverting

:
250mA

:
500mA

:
10V

:
20V

:
-

:
150°C

:
85ns

:
35ns

:
-

:
-

:
MSL 1 - Unlimited

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Technical Documents (3)

Packaging type Cut Tape

1,013 In stock Need more?

108 deliver in 2-3 business days from our SG warehouse
905 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥152.05 ( ¥167.26  Inc. JCT)

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