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ONSEMI FDMD8560L

Dual MOSFET, PowerTrench, N Channel, 60 V, 93 A, 0.0025 ohm

ONSEMI FDMD8560L

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
FDMD8560L
Order Code:
2610668
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Product Range
PowerTrench Series
Technical Datasheet:
FDMD8560L   Datasheet
ECAD / MCAD
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Product Overview

FDMD8560L is a dual N-channel PowerTrench® MOSFET. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Application includes „synchronous buck primary switch of half / full bridge converter for telecom, motor bridge primary switch of half / full bridge converter for BLDC motor, „MV POL 48V synchronous buck switch, and half/full bridge secondary synchronous rectification.
  • Ideal for flexible layout in primary side of bridge topology
  • 100% UIL tested, kelvin high side MOSFET drive Pin-out capability
  • Static drain to source on resistance is 2.5mohm (typ, VGS = 10V, ID = 22A, Q1)
  • Drain to source voltage is 60V (Q1, Q2, typ, TA = 25°C)
  • Gate to source threshold voltage is 1.0V (typ, Q1, Q2, VGS = VDS, ID = 250µA)
  • Power dissipation is 48W (typ, Q1, Q2, TC = 25°C)
  • Rise time is 15ns (typ, Q1, Q2, VDD = 30V, ID = 22A, VGS = 10V, RGEN = 6ohm)
  • Reverse recovery time is 53ns (Q1, Q2, IF = 22A, di/dt = 100A/µs, typ)
  • Operating and storage junction temperature range from -55 to +150°C, power 5 x 6 package

Product Information

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:
N Channel

:
60V

:
-

:
93A

:
-

:
0.0025ohm

:
-

:
PQFN

:
8Pins

:
48W

:
-

:
150°C

:
PowerTrench Series

:
-

:
MSL 1 - Unlimited

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Technical Documents (2)

Packaging type Cut Tape

4,400 In stock

4,400 deliver in 3-4 business days from our UK warehouse

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¥606.63 ( ¥667.29  Inc. JCT)

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