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ONSEMI 1N5821G

Schottky Rectifier, 30 V, 3 A, Single, Axial Leaded, 2 Pins, 500 mV

ONSEMI 1N5821G

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
1N5821G
Order Code:
2535564
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Technical Datasheet:
1N5821G   Datasheet
ECAD / MCAD
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Product Overview

The 1N5821G is an axial-lead Schottky Barrier Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifier in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.
  • Cathode indicated by polarity band
  • Extremely low VF
  • Low power loss/high efficiency
  • Low stored charge, majority carrier conduction
  • All external surfaces corrosion-resistant

Applications

Power Management, Industrial

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
30V

:
3A

:
Single

:
Axial Leaded

:
2Pins

:
500mV

:
80A

:
125°C

:
Through Hole

:
1N5821

:
-

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Technical Documents (3)

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¥76.37 ( ¥84.01  Inc. JCT)

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