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ONSEMI NTMFS5C670NLT1G

Power MOSFET, N Channel, 60 V, 71 A, 0.0051 ohm, DFN, Surface Mount

ONSEMI NTMFS5C670NLT1G

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
NTMFS5C670NLT1G
Order Code:
2508376
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Technical Datasheet:
NTMFS5C670NLT1G   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Overview

NTMFS5C670NLT1G is a single N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
  • Continuous drain current is 71A
  • Power dissipation is 61W at (TC = 25°C)
  • Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
  • Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
  • Threshold temperature coefficient is -4.7mV/°C typical at (TJ = 25°C)
  • Input capacitance is 1400pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
  • Turn-on delay time is 11ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
  • Rise time is 60ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
  • Zero gate voltage drain current is 10µA maximum at (TJ = 25°C)
  • Junction temperature range from -55°C to +175°C, DFN5 package

Product Information

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:
N Channel

:
60V

:
71A

:
0.0051ohm

:
DFN

:
Surface Mount

:
10V

:
2V

:
61W

:
5Pins

:
175°C

:
-

:
-

:
MSL 1 - Unlimited

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Technical Documents (2)

Packaging type Cut Tape

1,204 In stock

3,000 more will be available on 3/24/25

Reserving future stock
300 deliver in 2-3 business days from our SG warehouse
904 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥125.63 ( ¥138.19  Inc. JCT)

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