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ONSEMI MJE5852G

Bipolar (BJT) Single Transistor, PNP, 400 V, 8 A, 80 W, TO-220AB, Through Hole

ONSEMI MJE5852G

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
MJE5852G
Order Code:
9555889
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Technical Datasheet:
MJE5852G   Datasheet
ECAD / MCAD
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Product Overview

The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated switch-mode applications.
  • Fast turn-off times
  • Complementary to the MJE13007 series
  • 6V Emitter to base voltage (VEBO)
  • 16ADC Peak collector current
  • 4ADC Base current (IB)
  • 1.25°C/W Thermal resistance, junction to case

Applications

Industrial, Power Management

Product Information

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:
PNP

:
400V

:
8A

:
80W

:
TO-220AB

:
Through Hole

:
3Pins

:
-

:
15hFE

:
150°C

:
MJxxxx

:
-

:
-

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Technical Documents (3)

196 In stock Need more?

196 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥611.33 ( ¥672.46  Inc. JCT)

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