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ONSEMI KSC3503DS

Bipolar (BJT) Single Transistor, NPN, 300 V, 100 mA, 7 W, TO-225AA, Through Hole

ONSEMI KSC3503DS

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
KSC3503DS
Order Code:
2453955
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Technical Datasheet:
KSC3503DS   Datasheet
ECAD / MCAD
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Product Overview

The KSC3503DS is a NPN Epitaxial Silicon Transistor offers 300V low base voltage and 100A collector current. It is suitable for voltage amplifier, current source, CRT display and video output applications.
  • High voltage
  • 1.8pF at 30V VCB Low reverse transfer capacitance
  • Excellent gain linearity for low THD
  • 150MHz High frequency
  • Complementary to KSC1381

Applications

Audio, Multimedia, Industrial, Power Management

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
NPN

:
300V

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100mA

:
7W

:
TO-225AA

:
Through Hole

:
3Pins

:
150MHz

:
60hFE

:
150°C

:
-

:
-

:
-

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Technical Documents (4)

1,240 In stock Need more?

1,240 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥153.62 ( ¥168.98  Inc. JCT)

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