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ONSEMI HGTG30N60A4D

IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

ONSEMI HGTG30N60A4D

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
HGTG30N60A4D
Order Code:
9846611
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Technical Datasheet:
HGTG30N60A4D   Datasheet
ECAD / MCAD
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Product Overview

The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 60ns at TJ = 125°C Fall time

Product Information

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:
75A

:
2.6V

:
463W

:
600V

:
TO-247

:
3Pins

:
150°C

:
Through Hole

:
-

:
-

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Technical Documents (2)

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