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ONSEMI FDH055N15A

Power MOSFET, N Channel, 150 V, 156 A, 0.0048 ohm, TO-247, Through Hole

ONSEMI FDH055N15A

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
FDH055N15A
Order Code:
2825158
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Product Range
PowerTrench
Technical Datasheet:
FDH055N15A   Datasheet
ECAD / MCAD
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Product Overview

FDH055N15A is a N-channel, POWERTRENCH® MOSFET. This N-channel MOSFET is produced using Onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The application includes synchronous rectification for ATX / sever / telecom PSU, battery protection circuit, motor drives and uninterruptible power supplies, micro solar inverter.
  • Fast switching speed, low gate charge, high power and current handling capability
  • High performance trench technology for extremely low RDS(on)
  • Static drain to source on resistance is 4.8mohm typ (VGS = 10V, ID = 120A, TC = 25°C)
  • Drain to source breakdown voltage is 150V min (ID = 250µA, VGS = 0V, TC = 25°C)
  • Breakdown voltage temperature coefficient is 0.1V/°C typ (ID = 250µA, Referenced to 25°C)
  • Gate threshold voltage range from 2.0 to 4.0V (VGS = VDS, ID = 250µA, 25°C)
  • Input capacitance is 7100pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
  • Output capacitance is 664pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
  • Power dissipation is 429W (25°C)
  • TO−247−3LD package, operating temperature range from -55 to + 175°C

Product Information

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:
N Channel

:
150V

:
156A

:
0.0048ohm

:
TO-247

:
Through Hole

:
10V

:
4V

:
429W

:
3Pins

:
175°C

:
PowerTrench

:
-

:
MSL 1 - Unlimited

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Technical Documents (2)

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¥547.51 ( ¥602.26  Inc. JCT)

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