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NXP BFU590GX

Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223

NXP BFU590GX

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Manufacturer:
NXP NXP
Manufacturer Part No:
BFU590GX
Order Code:
2776268
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Technical Datasheet:
BFU590GX   Datasheet
ECAD / MCAD
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Product Overview

BFU590GX is a NPN wideband silicon RF transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2GHz. Typical applications include automotive applications, broadband amplifiers, medium power amplifiers (500mW at a frequency of 433MHz or 866MHz) and large signal amplifiers for ISM applications.
  • 24V collector-base voltage, 12V collector-emitter voltage, 2V emitter-base voltage
  • Medium power, high linearity, high breakdown voltage RF transistor
  • 95 typical DC gain
  • Maximum stable gain is 13dB at 900MHz
  • AEC-Q101 qualified
  • Output power at 1dB gain compression PL(1dB) is 21.5dBm at 900MHz
  • 8.5GHz transition frequency

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
NPN

:
12V

:
8.5GHz

:
2W

:
200mA

:
SOT-223

:
4Pins

:
60hFE

:
Surface Mount

:
150°C

:
-

:
AEC-Q101

:
MSL 1 - Unlimited

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Technical Documents (1)

Packaging type Cut Tape

1,909 In stock

2,000 more will be available on 2/28/25

Reserving future stock
1,909 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥169.60 ( ¥186.56  Inc. JCT)

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