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NEXPERIA GAN041-650WSBQ
Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 0.041 ohm, 22 nC, TO-247, Through Hole
- Manufacturer:
- NEXPERIA NEXPERIA
- Manufacturer Part No:
- GAN041-650WSBQ
- Order Code:
- 3759053
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- Product Range
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- Technical Datasheet:
- GAN041-650WSBQ Datasheet
- ECAD / MCAD
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Product Overview
GAN041-650WSBQ is a 650V, 35mohm Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. The applications include hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, and UPS inverters, and servo motor drives.
- Ultra-low reverse recovery charge, simple gate drive (0V to +10V or 12V), robust gate oxide (±20V)
- High gate threshold voltage (+4V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode, transient over-voltage capability (800V)
- Drain-source voltage is 650V max (55°C ≤ Tj ≤ 175°C)
- Drain current is 47.2A max (VGS = 10V; Tmb = 25°C), total power dissipation is 187W max (Tmb = 25°C)
- Drain-source on-state resistance is 35mohm typ (VGS = 10V; ID = 32A; Tj = 25°C)
- Gate-drain charge is 6.6nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
- Total gate charge is 22nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
- Recovered charge is 150nC typ (IS = 32A; dIS/dt = -1000A/µs; VGS = 0V; VDS = 400V)
- 3 leads SOT429 package, junction temperature range from -55 to 175°C
Product Information
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- 650V
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- 47.2A
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- 0.041ohm
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- 22nC
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- TO-247
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- Through Hole
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- 3Pins
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- -
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- -
Technical Documents (2)
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261 deliver in 3-4 business days from our UK warehouse
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¥2,592.65
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¥2,851.92
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