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MICRON MT53E256M32D2DS-046 IT:B

DRAM, Mobile LPDDR4, 8 Gbit, 256M x 32bit, 2.133 GHz, WFBGA, 200 Pins

MICRON MT53E256M32D2DS-046 IT:B

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Manufacturer:
MICRON MICRON
Manufacturer Part No:
MT53E256M32D2DS-046 IT:B
Order Code:
4050877
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Product Overview

MT53E256M32D2DS-046 IT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16’s 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16 bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
  • Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
  • 256Meg x 32 configuration, LPDDR4, 2die addressing
  • Packaging style is 200-ball WFBGA 10 x 14.5 x 0.8mm (Ø0.35 SMD)
  • Cycle time is 468ps, ᵗCK RL = 36/40
  • Operating temperature range is –40°C to +95°C, B design
  • Clock rate is 2133MHz, data rate per pin is 4266Mb/s
  • Ultra-low-voltage core and I/O power supplies
  • 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)

Product Information

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:
Mobile LPDDR4

:
8Gbit

:
256M x 32bit

:
2.133GHz

:
WFBGA

:
200Pins

:
1.1V

:
Surface Mount

:
-40°C

:
95°C

:
TUK SGACK902S Keystone Coupler

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Technical Documents (1)

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¥2,570.70 ( ¥2,827.77  Inc. JCT)

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