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MICRON MT53E1G32D2FW-046 IT:B

DRAM, LPDDR4, 32 Gbit, 1G x 32bit, 2.133GHz, TFBGA, 200 Pins

MICRON MT53E1G32D2FW-046 IT:B

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Manufacturer:
MICRON MICRON
Manufacturer Part No:
MT53E1G32D2FW-046 IT:B
Order Code:
3954463
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ECAD / MCAD
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Product Overview

MT53E1G32D2 is a 32Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
  • 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL), programmable VSS (ODT) termination
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
  • Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
  • 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage
  • 1 Gig x 32 configuration, LPDDR4, 2 die addressing
  • 200-ball TFBGA (Ø0.40 SMD) package, 468ps cycle time
  • Operating temperature rating range from -40°C to +95°C

Product Information

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:
Mobile LPDDR4

:
32Gbit

:
1G x 32bit

:
2.133GHz

:
TFBGA

:
200Pins

:
1.1V

:
Surface Mount

:
-40°C

:
95°C

:
-

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Technical Documents (1)

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