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MICRON MT53E128M32D2FW-046 WT:A

DRAM, Mobile LPDDR4, 4 Gbit, 128M x 32bit, 2.133 GHz, TFBGA, 200 Pins

MICRON MT53E128M32D2FW-046 WT:A
MICRON MT53E128M32D2FW-046 WT:A

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Manufacturer:
MICRON MICRON
Manufacturer Part No:
MT53E128M32D2FW-046 WT:A
Order Code:
3652203
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Product Overview

MT53E128M32D2 is a mobile low-power DDR4 SDRAM (LPDDR4). It is a high-speed CMOS, dynamic random-access memory internally configured with either 1 or 2 channels. Each channel is comprised of 16 DQs and 8banks. It uses a 2-tick, single-data-rate (SDR) protocol on the CA bus to reduce the number of input signals in the system. The term "2-tick" means that the command/address is decoded across two transactions, such that half of the command/address is captured with each of two consecutive rising edges of CK. The 6-bit CA bus contains command, address, and bank information. Some commands such as READ, WRITE, MASKED WRITE, and ACTIVATE require two consecutive 2-tick SDR commands to complete the instruction. Read and write accesses to the device are burst-oriented. Accesses start at a selected column address and continue for a programmed number of columns in a programmed sequence.
  • Operating voltage is 1.10V VDD2/0.60V or 1.10V VDDQ
  • 128 meg x 16 configuration
  • 2 die addressing, clock-stop capability, single-ended CK and DQS support
  • Cycle time is 468ps, tCK RL = 36/40
  • Clock rate is 2133MHz, data rate is 4266Mb/s/pin
  • Bidirectional/differential data strobe per byte lane, partial-array self refresh (PASR)
  • Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • Operating temperature range is -25°C to +85°C
  • Package style is 200-ball TFBGA

Product Information

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:
Mobile LPDDR4

:
4Gbit

:
128M x 32bit

:
2.133GHz

:
TFBGA

:
200Pins

:
1.1V

:
Surface Mount

:
-25°C

:
85°C

:
Multicomp Pro RJ45 Adapter

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Technical Documents (1)

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¥1,438.22 ( ¥1,582.04  Inc. JCT)

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