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IXYS SEMICONDUCTOR IXFN200N10P

MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 0.0075 ohm, 15 V, 5 V

IXYS SEMICONDUCTOR IXFN200N10P

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Manufacturer Part No:
IXFN200N10P
Order Code:
1427322
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Technical Datasheet:
IXFN200N10P   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Range Selector (Polar(TM) HiPerFET)

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Product Overview

The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
  • Fast intrinsic rectifier
  • Rugged polysilicon gate cell structure
  • Encapsulating epoxy meets UL94V-0, flammability classification
  • Rugged polysilicon gate cell structure
  • Easy to mount
  • High power density
  • Space savings

Applications

Power Management, Lighting

Product Information

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:
N Channel

:
200A

:
100V

:
0.0075ohm

:
ISOTOP

:
15V

:
Module

:
5V

:
680W

:
175°C

:
4Pins

:
Polar(TM) HiPerFET

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Technical Documents (2)

264 In stock

300 more will be available on 6/21/25
300 more will be available on 7/19/25

Reserving future stock
264 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥4,328.88 ( ¥4,761.77  Inc. JCT)

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