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INFINEON IRFH4253DTRPBF

Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 0.0011 ohm

INFINEON IRFH4253DTRPBF
INFINEON IRFH4253DTRPBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRFH4253DTRPBF
Order Code:
2577150
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Also Known As:
SP001556246
Technical Datasheet:
IRFH4253DTRPBF   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Overview

IRFH4253DTRPBF is a HEXFET® Power MOSFET. Application includes control and synchronous MOSFETs for synchronous buck converters.
  • Control and synchronous MOSFETs in one package, increased power density
  • Low charge control MOSFET (10nC typical), lower switching losses
  • Low RDSON synchronous MOSFET (1.45mohm), lower conduction losses
  • Intrinsic schottky diode with low forward voltage on Q2, lower switching losses
  • Environmentally friendlier, industrial qualification, increased reliability
  • Drain-to-source breakdown voltage is 25V (typ, Q1, Q2, VGS = 0V, ID = 250µA/1.0mA)
  • Breakdown voltage temp coefficient is 22mV/°C (typ, Q1, Q2, reference to 25°C, ID = 1.0mA)
  • Gate threshold voltage is 1.6V (typ, Q1: VDS = VGS, ID = 35µA, Q2: VDS = VGS, ID = 100µA)
  • Drain-to-source leakage current is 1.0µA (typ, VDS = 20V, VGS = 0V, TJ = 25°C)
  • Dual PQFN package, operating junction and storage temperature range from -55 to + 150°C

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Technical Documents (3)

Also Known As

SP001556246
Packaging type Cut Tape

2,660 In stock

2,660 deliver in 3-4 business days from our UK warehouse

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¥362.87 ( ¥399.16  Inc. JCT)

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