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INFINEON IRFB4020PBF

Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole

INFINEON IRFB4020PBF
INFINEON IRFB4020PBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRFB4020PBF
Order Code:
1436954
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Also Known As:
SP001564028
Technical Datasheet:
IRFB4020PBF   Datasheet
ECAD / MCAD
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Product Overview

The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier. It is suitable for battery operated drive, full-bridge and push-pull application.
  • Low RDS (ON) for improved efficiency
  • Low Qg and Qsw for better THD and improved efficiency
  • Low QRR for better THD and lower EMI

Applications

Audio, Consumer Electronics, Power Management

Product Information

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:
N Channel

:
200V

:
18A

:
0.1ohm

:
TO-220AB

:
Through Hole

:
10V

:
4.9V

:
100W

:
3Pins

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175°C

:
-

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-

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-

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Technical Documents (2)

Also Known As

SP001564028

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¥315.07 ( ¥346.58  Inc. JCT)

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