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INFINEON IRF7389TRPBF

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7.3 A, 7.3 A, 0.023 ohm

INFINEON IRF7389TRPBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF7389TRPBF
Order Code:
2468017
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Also Known As:
SP001554234
Technical Datasheet:
IRF7389TRPBF   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Overview

The IRF7389TRPBF is a HEXFET power MOSFET in 8 pin SOIC package. This dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
  • Generation V technology
  • Ultra low ON-resistance
  • Complimentary half bridge
  • Fully avalanche rated
  • 30V P channel and -30V N channel drain to source voltage
  • 7.3A P channel and -5.3A N channel continues drain current

Applications

Industrial, Power Management

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
Complementary N and P Channel

:
30V

:
30V

:
7.3A

:
7.3A

:
0.023ohm

:
0.023ohm

:
SOIC

:
8Pins

:
2.5W

:
2.5W

:
150°C

:
-

:
-

:
MSL 1 - Unlimited

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Technical Documents (3)

Also Known As

SP001554234
Packaging type Cut Tape

2,056 In stock Need more?

2,056 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥134.97 ( ¥148.47  Inc. JCT)

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