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INFINEON IRF3205ZLPBF
Power MOSFET, N Channel, 55 V, 110 A, 0.0065 ohm, TO-262, Through Hole
- Manufacturer:
- INFINEON INFINEON
- Manufacturer Part No:
- IRF3205ZLPBF
- Order Code:
- 2579973
-
-
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- Also Known As:
- SP001564660
- Technical Datasheet:
- IRF3205ZLPBF Datasheet
- ECAD / MCAD
-
Product Range Selector (HEXFET Series)
See all from this product rangeProduct Overview
IRF3205ZLPBF is a HEXFET® Power MOSFET that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This feature combines to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Ultra low on-resistance
- Fast switching, repetitive avalanche allowed up to Tjmax
- Drain-to-source breakdown voltage is 55V (min, VGS = 0V, ID = 250µA, TJ = 25°C)
- Static drain-to-source on-resistance is 4.9mohm (typ, VGS = 10V, ID = 66A, TJ = 25°C)
- Drain-to-source leakage current is 20µA (max, VDS = 55V, VGS = 0, TJ = 25°C)
- Gate-to-source charge is 21nC (typ, VDS = 44V, TJ = 25°C)
- Turn-on delay time is 18ns (typ, VDD = 28, TJ = 25°C)
- Fall time is 67ns (typ, VGS = 10V, TJ = 25°C)
- Reverse recovery time is 28ns (typ, TJ = 25°C, IF = 66A, VDD = 25V)
- TO-262 package, operating junction and storage temperature range from -55 to 175°C
Product Information
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- :
- N Channel
- :
- 55V
- :
- 110A
- :
- 0.0065ohm
- :
- TO-262
- :
- Through Hole
- :
- 10V
- :
- 4V
- :
- 170W
- :
- 3Pins
- :
- 175°C
- :
- HEXFET Series
- :
- -
- :
- MSL 1 - Unlimited
Technical Documents (2)
Also Known As
SP001564660
1,931 In stock
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¥341.72
(
¥375.89
Inc. JCT)
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| 1+ | ¥341.72 (¥375.89) | ( ) |
| 10+ | ¥245.26 (¥269.79) | ( ) |
| 100+ | ¥184.67 (¥203.14) | ( ) |
| 500+ | ¥155.83 (¥171.41) | ( ) |
| 1000+ | ¥133.60 (¥146.96) | ( ) |
| 5000+ | ¥127.99 (¥140.79) | ( ) |
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