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INFINEON IR2111SPBF

Dual MOSFET IC, High Side And Low Side, 10V-20V Supply, 500mA Out, 150ns Delay, SOIC-8

INFINEON IR2111SPBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IR2111SPBF
Order Code:
8638861
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Also Known As:
SP001535352
Technical Datasheet:
IR2111SPBF   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Overview

The IR2111SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
  • Floating channel designed for bootstrap operation
  • Tolerant to negative transient voltage (dV/dt immune)
  • Under-voltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Internally set dead-time
  • High-side output in phase with input

Applications

Power Management

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
2Channels

:
-

:
Half Bridge

:
MOSFET

:
8Pins

:
SOIC

:
Surface Mount

:
Non-Inverting

:
250mA

:
500mA

:
10V

:
20V

:
-40°C

:
125°C

:
750ns

:
150ns

:
-

:
-

:
MSL 2 - 1 year

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Technical Documents (2)

Also Known As

SP001535352

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Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥262.69 ( ¥288.96  Inc. JCT)

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