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INFINEON IMBG120R140M1HXTMA1

Silicon Carbide MOSFET, Single, N Channel, 18 A, 1.2 kV, 0.189 ohm, TO-263 (D2PAK)

INFINEON IMBG120R140M1HXTMA1

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IMBG120R140M1HXTMA1
Order Code:
3582465
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Also Known As:
IMBG120R140M1H, SP004463792
ECAD / MCAD
Supply Frame Models Link
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Product Overview

IMBG120R140M1HXTMA1 is a CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology. Typical applications include drives, infrastructure – charger, energy generation solar string inverter and solar optimizer and industrial power supplies-industrial UPS.
  • Very low switching losses
  • Short circuit withstand time 3µs
  • Fully controllable dV/dt
  • Benchmark gate threshold voltage, VGS(th) = 4.5V
  • Robust against parasitic turn on, 0V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • Package creepage and clearance distance 6.1mm
  • Sense pin for optimized switching performance
  • Efficiency improvement, enabling higher frequency and increased power density
  • Cooling effort reduction and reduction of system complexity and cost

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
Single

:
N Channel

:
18A

:
1.2kV

:
0.189ohm

:
TO-263 (D2PAK)

:
7Pins

:
18V

:
5.7V

:
107W

:
175°C

:
CoolSiC Trench Series

:
MSL 1 - Unlimited

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Technical Documents (1)

Also Known As

IMBG120R140M1H, SP004463792
Packaging type Cut Tape

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2,339 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥948.34 ( ¥1,043.17  Inc. JCT)

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