You have entered a value in the highlighted fields below that contain invalid characters. Please revise your selection using valid characters only.
Product may not be an exact match for your search
You previously purchased this product.
View in Order History
INFINEON FF23MR12W1M1B11BOMA1
Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 50 A, 1.2 kV, 0.023 ohm, Module
- Manufacturer:
- INFINEON INFINEON
- Manufacturer Part No:
- FF23MR12W1M1B11BOMA1
- Order Code:
- 2771413
-
-
Maximum Part Numbers added.
Delete older entries to add more.
- Product Range
- CoolSic
- Also Known As:
- FF23MR12W1M1_B11, SP001602224
- Technical Datasheet:
- FF23MR12W1M1B11BOMA1 Datasheet
- ECAD / MCAD
-
Product Range Selector (CoolSic)
See all from this product rangeProduct Overview
The CoolSiC™ MOSFET from Infineon is a leading edge solution to bring designs towards new unattainable efficiency and power density levels. In comparison to traditional Si based switches like IGBTs and MOSFETs, the SiC MOSFET offers advantages such as lowest gate charge and device capacitances levels seen in 1200V switches, no reverse recovery losses of internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics. The TO-247-4 pin package of CoolSiC™ MOSFET contains an additional connection to the source that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3 pin version, especially at higher currents and higher switching frequencies. Easy1B modules(EasyDUAL™) offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections.
- CoolSiC™ are first products targeted for photovoltaic inverters, battery charging, energy storage
- Superior gate oxide reliability
- Best in class switching and conduction losses
- IGBT compatible driving (+15V), threshold voltage of Vth = 4V, Short-circuit robustness
- Efficiency improvement and reduced cooling effort
- Significant reduction in junction temperature for longer lifetime and higher reliability
- Enables higher frequency operation for reduction in system cost and shrink
- 2 level topologies can replace 3-level with same efficiency for lower complexity and cost
- Allows for increase in power density, ease of design and implementation
- Excellent for hard switching and resonant switching topologies like LLC and ZVS
Applications
Power Management, Industrial, Medical
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product Information
Want to see similar products? Simply select your required attributes below and hit the button ×
- :
- Half Bridge
- :
- N Channel
- :
- 50A
- :
- 1.2kV
- :
- 0.023ohm
- :
- Module
- :
- -
- :
- -
- :
- 4.5V
- :
- 20mW
- :
- 150°C
- :
- CoolSic
Technical Documents (2)
Also Known As
FF23MR12W1M1_B11, SP001602224
No Longer Manufactured
¥15,692.09
(
¥17,261.30
Inc. JCT)
Pricing is unavailable. Please contact customer services.
- Price for:
- Each
Multiple: 1 Minimum: 1
- 1+
- 5+
- 10+
- 50+
| Quantity | Price (Incl JCT) | Your Price (Incl JCT) |
|---|---|---|
| 1+ | ¥15,692.09 (¥17,261.30) | ( ) |
| 5+ | ¥14,547.89 (¥16,002.68) | ( ) |
| 10+ | ¥13,273.06 (¥14,600.37) | ( ) |
| 50+ | ¥13,004.49 (¥14,304.94) | ( ) |
| Quantity | Price (Incl JCT) | Your Price (Incl JCT) |
|---|
Pricing is unavailable. Please contact customer services.
Total Price:
Total Price: ( )
Total Price: --
Filter Tool