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INFINEON BFP842ESDH6327XTSA1

Bipolar - RF Transistor, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, SOT-343

INFINEON BFP842ESDH6327XTSA1

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
BFP842ESDH6327XTSA1
Order Code:
2480677
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Also Known As:
BFP 842ESD H6327, SP000943012
ECAD / MCAD
Supply Frame Models Link
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Product Overview

The BFP 842ESD H6327 is a high performance Hetero-junction Bipolar Transistor specifically designed for 2.3 to 3.5GHz LNA applications. The device is based upon the reliable high volume silicon germanium carbon technology of Infineon. It provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5GHz. The simultaneous noise and power match without loss external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery-powered applications in which energy efficiency is a key requirement.
  • Robust very low-noise amplifier
  • Unique combination of high end RF performance and robustness
  • Low power consumption
  • Easy to use
  • Halogen-free

Applications

Industrial, Power Management, Wireless

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
NPN

:
3.25V

:
57GHz

:
120mW

:
40mA

:
SOT-343

:
4Pins

:
150hFE

:
Surface Mount

:
150°C

:
-

:
-

:
MSL 1 - Unlimited

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Technical Documents (3)

Also Known As

BFP 842ESD H6327, SP000943012
Packaging type Cut Tape

645 In stock Need more?

645 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥62.70 ( ¥68.97  Inc. JCT)

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