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INFINEON BFP740FESDH6327XTSA1

Bipolar - RF Transistor, NPN, 4.2 V, 47 GHz, 160 mW, 45 mA, TSFP

INFINEON BFP740FESDH6327XTSA1

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
BFP740FESDH6327XTSA1
Order Code:
2480674
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Also Known As:
BFP 740FESD H6327, SP000890036
ECAD / MCAD
Supply Frame Models Link
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Product Overview

The BFP 740FESD H6327 is a NPN very low-noise wideband Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 47GHz, hence the device offers high power gain at frequencies up to 12GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.
  • 2kV ESD robustness (HBM) due to integrated protection circuits
  • Halogen-free

Applications

Industrial, RF Communications, Power Management

Product Information

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:
NPN

:
4.2V

:
47GHz

:
160mW

:
45mA

:
TSFP

:
4Pins

:
160hFE

:
Surface Mount

:
150°C

:
-

:
-

:
MSL 1 - Unlimited

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Technical Documents (3)

Also Known As

BFP 740FESD H6327, SP000890036
Packaging type Cut Tape

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