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GENESIC SEMICONDUCTOR G3R30MT12K

Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.03 ohm, TO-247

GENESIC SEMICONDUCTOR G3R30MT12K

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Manufacturer Part No:
G3R30MT12K
Order Code:
3598641
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Technical Datasheet:
G3R30MT12K   Datasheet
ECAD / MCAD
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Product Range Selector (G3R)

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Product Overview

G3R30MT12K is a 1200V, 30mohm, N-channel enhancement mode, silicon carbide MOSFET. Applications include solar inverters, motor drives, EV charging, high voltage DC-DC converters, switched mode power supplies, UPS, smart grid transmission and distribution, induction heating and welding.
  • G3R™ (3rd generation) technology, low temperature coefficient of RDS(ON)
  • Lower Q and smaller RG(INT), low device capacitances (COSS, CRSS)
  • LoRing™ - electromagnetically optimized design, superior cost-performance index
  • Robust body diode with low VF and low QRR, 100% avalanche (UIL) tested
  • Compatible with commercial gate drivers, low conduction losses at all temperatures
  • Faster and more efficient switching, lesser switching spikes and lower losses
  • Reduced ringing, better power density and system efficiency
  • Ease of paralleling without thermal runaway, superior robustness and system reliability
  • Operating and storage temperature range from -55 to 175°C, TO-247-4 package
  • Continuous forward current is 50A at Tc = 100°C, V = -5 / +15V

Product Information

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:
Single

:
N Channel

:
90A

:
1.2kV

:
0.03ohm

:
TO-247

:
4Pins

:
15V

:
2.69V

:
281W

:
175°C

:
G3R

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Technical Documents (1)

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293 deliver in 3-4 business days from our UK warehouse

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¥3,818.85 ( ¥4,200.74  Inc. JCT)

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