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DIODES INC. DMG6602SVT
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 3.4 A, 0.038 ohm
- Manufacturer:
- DIODES INC. DIODES INC.
- Manufacturer Part No:
- DMG6602SVT
- Order Code:
- 2061522
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- Technical Datasheet:
- DMG6602SVT Datasheet
- ECAD / MCAD
-
Product Overview
The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and maintain superior switching performance, making it ideal for high efficiency power management applications and backlighting.
- Automotive grade AEC-Q101 qualified
- UL recognized
- Drain to source voltage (Vds) of 30V
- Gate to source voltage (Vgs) of ±20V
- Continuous drain current of 3.4A
- Power dissipation (Pd) of 1.27W
- Operating temperature range -55°C to 150°C
- Low on state resistance of 38mohm at Vgs of 10V
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial, Automotive
Product Information
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- :
- Complementary N and P Channel
- :
- 30V
- :
- 30V
- :
- 3.4A
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- 3.4A
- :
- 0.038ohm
- :
- 0.038ohm
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- TSOT-26
- :
- 6Pins
- :
- 1.12W
- :
- 1.12W
- :
- 150°C
- :
- -
- :
- -
- :
- -
Technical Documents (1)
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Extra stock is available upon order to the Supplier Lead Time which is approximately 7/28/25
44,766 deliver in 3-4 business days from our UK warehouse
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¥42.33
(
¥46.56
Inc. JCT)
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| Quantity | Price (Incl JCT) | Your Price (Incl JCT) |
|---|---|---|
| 5+ | ¥42.33 (¥46.56) | ( ) |
| 10+ | ¥25.71 (¥28.28) | ( ) |
| 100+ | ¥13.33 (¥14.66) | ( ) |
| 500+ | ¥13.04 (¥14.34) | ( ) |
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