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ALLIANCE MEMORY AS4C64M16D3LC-12BIN

DRAM, DDR3, 1 Gbit, 64M x 16bit, 800 MHz, FBGA, 96 Pins

ALLIANCE MEMORY AS4C64M16D3LC-12BIN

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Manufacturer Part No:
AS4C64M16D3LC-12BIN
Order Code:
4260973
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ECAD / MCAD
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Product Overview

AS4C64M16D3LC-12BIN is a 64M x 16bit DDR3L synchronous DRAM (SDRAM). The 1Gb double-data-rate-3L (DDR3L) DRAMs is a double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM. The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices. It achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all DDR3L DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source-synchronous fashion.
  • JEDEC standard compliant, supports JEDEC clock jitter specification
  • Fully synchronous operation, fast clock rate: 800MHz, differential clock, CK and CK#
  • Bidirectional differential data strobe, DQS and DQS#, 8 internal banks for concurrent operation
  • 8n-bit prefetch architecture, pipelined internal architecture, precharge and active power down
  • Programmable mode and extended mode registers, additive latency (AL): 0, CL-1, CL-2
  • Programmable burst lengths: 4, 8, burst type: sequential/interleave, output driver impedance control
  • Auto refresh and self refresh, write levelling
  • ZQ calibration, dynamic ODT (Rtt-Nom and Rtt-WR)
  • 96-ball FBGA package
  • Industrial temperature range from -40°C to 95°C

Product Information

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:
DDR3

:
1Gbit

:
64M x 16bit

:
800MHz

:
FBGA

:
96Pins

:
1.35V

:
Surface Mount

:
-40°C

:
95°C

:
-

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Technical Documents (1)

Available for back order

More stock available to supplier lead times which is approximately 3/24/25

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¥997.71 ( ¥1,097.48  Inc. JCT)

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