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ONSEMI NVH4L023N065M3S

Silicon Carbide MOSFET, Single, N Channel, 67 A, 650 V, 0.033 ohm, TO-247

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ONSEMI NVH4L023N065M3S

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
NVH4L023N065M3S
Order Code:
4583076
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Product Range
EliteSiC Series
Technical Datasheet:
NVH4L023N065M3S   Datasheet
ECAD / MCAD
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Product Overview

NVH4L023N065M3S is an EliteSiC 650V M3S MOSFET in a 4 pin TO-247 package. It uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include automotive on board charger and automotive DC−DC converter for EV/HEV.
  • Drain to source voltage is 650V, maximum drain current is 67A
  • Typical RDS(on) = 23mohm at VGS = 18V
  • Ultra low gate charge QG(tot) = 69nC
  • High speed switching with low capacitance (Coss = 153pF)
  • 100% avalanche tested
  • AEC−Q101 qualified and PPAP capable
  • Operating junction temperature range from -55 to +175°C

Product Information

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:
Single

:
N Channel

:
67A

:
650V

:
0.033ohm

:
TO-247

:
4Pins

:
18V

:
4V

:
245W

:
175°C

:
EliteSiC Series

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Technical Documents (1)

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¥2,961.01 (¥3,257.11 Inc. JCT)

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