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2N7000-D26Z
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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ManufacturerONSEMI
Manufacturer Part No2N7000-D26Z
Order Code1467958
Your Part Number
Technical Datasheet
11,152 In Stock
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| Quantity | Price (inc Tax) |
|---|---|
| 5+ | ¥42.38 (¥46.618) |
| 50+ | ¥37.94 (¥41.734) |
| 100+ | ¥33.5 (¥36.85) |
| 500+ | ¥25.24 (¥27.764) |
| 1000+ | ¥22.6 (¥24.86) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
¥212 (¥233 inc Tax)
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- ManufacturerONSEMIManufacturer Part No2N7000-D26ZOrder Code1467958Technical DatasheetChannel TypeN ChannelDrain Source Voltage Vds60VContinuous Drain Current Id200mADrain Source On State Resistance5ohmTransistor Case StyleTO-92Transistor MountingThrough HoleRds(on) Test Voltage10VGate Source Threshold Voltage Max2.1VPower Dissipation400mWNo. of Pins3PinsOperating Temperature Max150°CProduct Range-Qualification-MSL-SVHCNo SVHC (25-Jun-2025)
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 312.5°C/W Thermal resistance, junction to ambient
- Channel Type
N Channel
Continuous Drain Current Id200mA
Transistor Case StyleTO-92
Rds(on) Test Voltage10V
Power Dissipation400mW
Operating Temperature Max150°C
Qualification-
SVHCNo SVHC (25-Jun-2025)
Drain Source Voltage Vds60V
Drain Source On State Resistance5ohm
Transistor MountingThrough Hole
Gate Source Threshold Voltage Max2.1V
No. of Pins3Pins
Product Range-
MSL-
6 Products Found
- Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried outTariff No:85412900US ECCN:EAR99EU ECCN:NLRRoHS Compliant:YesRoHS
RoHS Phthalates Compliant:YesRoHS
SVHC:No SVHC (25-Jun-2025)Download Product Compliance CertificateProduct Compliance Certificate
Weight (kg):.000515