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ONSEMI HGTG11N120CND

IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 Pins

ONSEMI HGTG11N120CND

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
HGTG11N120CND
Order Code:
1611490
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Technical Datasheet:
HGTG11N120CND   Datasheet
ECAD / MCAD
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Product Overview

The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 340ns at TJ = 150°C Fall time

Product Information

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:
43A

:
2.4V

:
298W

:
1.2kV

:
TO-247

:
3Pins

:
150°C

:
Surface Mount

:
-

:
-

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Technical Documents (2)

1,783 In stock

450 more will be available on 1/31/25

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1,723 deliver in 3-4 business days from our UK warehouse
60 deliver in 8-9 business days from our US warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥822.94 ( ¥905.23  Inc. JCT)

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