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INFINEON S70GL02GS12FHIV10

Flash Memory, MirrorBit, Parallel NOR, 2 Gbit, 256M x 8bit / 128M x 16bit, CFI, Parallel, FBGA

INFINEON S70GL02GS12FHIV10

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
S70GL02GS12FHIV10
Order Code:
3018587
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Product Range
3V Parallel NOR Flash Memories
Also Known As:
SP005671039, S70GL02GS12FHIV10
ECAD / MCAD
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Product Range Selector (3V Parallel NOR Flash Memories)

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Product Overview

S70GL02GS12FHIV10 is a GL-T MIRRORBIT™ flash memory device is fabricated on 65-nm MIRRORBIT™ process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.
  • Single supply (VCC) for read / program / erase (2.7V to 3.6V)
  • 16-word/32-byte page read buffer
  • Programming in page multiples, up to a maximum of 512 bytes
  • Uniform 128-KB sectors, two thousand forty-eight sectors
  • Suspend and resume commands for program and erase operations
  • Status register, data polling, and ready/busy pin methods to determine device status
  • Volatile and non-volatile protection methods for each sector
  • Separate 1024byte one time program (OTP) array with two lockable regions
  • 100,000 erase cycles per sector typical, 20-year data retention typical
  • 64pin FBGA, industrial temperature range from -40°C to +85°C

Product Information

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:
Parallel NOR

:
2Gbit

:
256M x 8bit / 128M x 16bit

:
CFI, Parallel

:
FBGA

:
64Pins

:
-

:
120ns

:
2.7V

:
3.6V

:
3V

:
Surface Mount

:
-40°C

:
85°C

:
3V Parallel NOR Flash Memories

:
MSL 3 - 168 hours

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Technical Documents (1)

Also Known As

SP005671039, S70GL02GS12FHIV10

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¥3,574.85 ( ¥3,932.34  Inc. JCT)

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