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BROADCOM AFBR-S4N22P014M
Silicon Photomultiplier, 2mm × 2mm, 40µm/2464 Microcells, 420nm, Array, 4 Pin
- Manufacturer:
- BROADCOM BROADCOM
- Manufacturer Part No:
- AFBR-S4N22P014M
- Order Code:
- 4351470
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- Product Range
- -
- Technical Datasheet:
- AFBR-S4N22P014M Datasheet
- ECAD / MCAD
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Product Overview
AFBR-S4N22P014M is a single-channel silicon photomultiplier (SiPM) array that is used for ultrasensitive precision measurements of single photons. This SiPM is based on NUV-MT technology, which combines improved photo-detection efficiency (PDE) with decreased dark count rate and reduced crosstalk compared to the NUV-HD technology. The SPAD pitch is 40μm. Larger areas can be covered by tiling multiple AFBR-S4N22P014M SiPMs. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mould compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near-UV region of the light spectrum. It is used in applications such as X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, safety and security, physics experiments, Cherenkov detection.
- High PDE (63% at 420nm), excellent SPTR and CRT
- 4-side tileable, with high fill factors
- Highly transparent epoxy protection layer
- Excellent uniformity of breakdown voltage and gain between devices
- Spectral range is 900nm maximum at (12V OV and 25°C)
- Breakdown voltage is 32.5V typical at (12V OV and 25°C)
- Photo-detection efficiency is 63% typical at (12V OV and 25°C)
- Temperature coefficient of breakdown voltage is 30mV/°C typical at (12V OV and 25°C)
- Dark current per element is 0.98µA typical at (12V OV and 25°C)
- Operating temperature range from -20°C to +60°C
Product Information
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- -
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- 2mm x 2mm
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- 2464Microcells
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- 40µm
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- 420nm
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- Array
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- Array
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- 4Pins
Technical Documents (1)
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¥3,528.45
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¥3,881.30
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